| PART |
Description |
Maker |
| APT8056BVR |
POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
| RJK4513DPE RJK4513DPE-00J3 RJK4513DPE-12 RJK4513DP |
450V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPP-E0 RJK60S4DPP-E0-T2 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HFA16TB120 |
1200V 16A HEXFRED Discrete Diode in a TO-220AC package
|
International Rectifier
|
| CRNA20-800 CRNB20-800 CRNA20-1200 CRNB20-1200 CRNA |
20Amp - 400/600/800/1200V - RECTIFIER 20Amp - 400/600/800/1200V -整流
|
Electronic Theatre Controls, Inc.
|
| 16MB100W 16MB120W |
V(rrm): 1000V; 16A rectifier bridge
V(rrm): 1200V; 16A rectifier bridge
|
International Rectifier
|
| 25TTS08 25TTS12 |
800V 16A Phase Control SCR in a TO-220 package
1200V 16A Phase Control SCR in a TO-220 package
|
International Rectifier
|
| STB3NA80 STB3NA80-1 |
3.1 A, 800 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS
ST Microelectronics
|
| HFA16TB120S HFA16TB120STRR HFA16TB120STRL |
1200V 16A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
